Semiconductor device for a face down bonding to a mounting substrate and a method of manufacturing the same

ABSTRACT

Resin meltable at a time of reflowing is provided on the surface of a semiconductor chip and top ends of the connection electrodes are located parallel with the surface of the resin. A semiconductor chip is mounted on a mounting substrate and, upon reflowing, the resin is molten to allow the semiconductive chip to be bonded to the mounting substrate and encapsulate a resultant structure.

This is a divisional of application Ser. No. 08/807,816, filed Feb. 26,1997, now U.S. Pat. No. 5,925,936 which is incorporated herein byreference.

BACKGROUND OF THE INVENTION

The present invention relates to a semiconductor device for face downbonding to a mounting substrate and a method for manufacturing the same.

FIG. 9 shows a conventional method for mounting a semiconductor chipdirectly on a mounting substrate.

First, bump electrodes 2 are provided on an electrode, not shown,provided on a semiconductor wafer or a semiconductor chip 5. In the casewhere bump electrodes are to be formed on the semiconductor wafer, thesemiconductor wafer is diced into semiconductor chips 5.

Then the semiconductor chip 5 is face down bounded to the mountingsubstrate 6 by a flip-chip bonding technique so as to connect the bumpelectrodes 2 to substrate electrodes 7 on a mounting substrate 6.

Then, a reflow process is carried out.

Thereafter, in order to improve the heat resistance fatigue, moistureresistance, etc., and ensure the mechanical protection, resin is filledin a clearance between the semiconductor chip 5 and the mountingsubstrate 6.

FIG. 10 shows another conventional semiconductor chip mounting method.

First, a semiconductor chip is resin-sealed in a semiconductor package15 or a semiconductor chip is mounted in a ceramic- or a metal-package15.

Thereafter, the semiconductor package 15 is mounted on a mountingsubstrate 6.

In the case where the semiconductor chip is to be mounted directly onthe substrate, it is necessary to carry out a resin filling step afterthe semiconductor chip has been mounted on the substrate. For thisreason, the assembling cost is increased.

Further, in the case where the semiconductor chip is sealed in thesemiconductor package and a resultant package is mounted on thesubstrate, a so-mounted product becomes bulkier because it uses thepackage. This decreases the number of semiconductor devices mountable onthe mounting substrate and hence lowers the mounting efficiency.

BRIEF SUMMARY OF THE INVENTION

It is accordingly the object of the present invention to provide asemiconductor device which can achieve substantially the same mountingefficiency as that of a bare chip mounting method, while achieving thesame extent of reliability as a normal package-sealed semiconductordevice, and can lower its full cost.

The object of the present invention is achieved by the followingarrangement.

According to one aspect of the present invention there is provided asemiconductor device comprising:

a semiconductor chip; bump electrodes provided on the semiconductorchip; and a protection film coated on a surface of the semiconductorchip, allowing a top surface of the bump electrodes to be exposed, andadapted to, when the semiconductor chip is to be mounted, be molten andbond the semiconductor chip to a mounting substrate and encapsulate aresultant structure.

According to another aspect of the present invention, there is provideda method for manufacturing a semiconductor device, comprising the stepsof:

forming bump electrodes on a surface of a semiconductor chip;

coating, on a surface of a semiconductor chip including the bumpelectrodes, a protection film enough thick to completely cover the bumpelectrodes, the protection film being allowed to be molten at a time ofmounting the semiconductor chip, bond the chip to a mounting substrateand encapsulate the chip; and

polishing the protection film and bump electrodes until the bumpelectrodes are exposed and their exposed areas become enough great to bebonded.

According to another aspect of the present invention there is provided apackage structure comprising:

a mounting substrate;

connection terminals provided on a surface of the mounting substrate;

a soldering or brazing material provided on the connection terminals toallow terminal connection;

a semiconductor chip whose surface is so located as to face the surfaceof the mounting substrate;

bump electrodes provided on the surface of the semiconductor chip, thebump electrode being connected to the connection terminal by melting thesoldering or brazing material for terminal connection; and

a protection film covered on the facing surface of the semiconductorchip in a manner to expose top surfaces of the bump electrodes, theprotection film being allowed to be molten, at a time of melting thesoldering or brazing material, bond the semiconductor chip to themounting substrate and encapsulate the chip.

According to another aspect of the present invention there is provided amethod for manufacturing a package structure, comprising the steps of:

locating a semiconductor device on a mounting substrate in an alignedrelation, the semiconductor device having a semiconductor chip, bumpelectrodes provided on the semiconductor chip and a protection filmcovering a surface of the semiconductor chip with top surfaces of thebump electrodes exposed and the mounting substrate having connectionterminals on a surface with a soldering or brazing material provided onthe connection terminals to allow terminal connection, the locating stepbeing so done as to locate the bump-electrode-carrying surface side ofthe semiconductor chip opposite to the mounting substrate with the bumpelectrodes aligned with the soldering or brazing material; and

heating the soldering or brazing material on the terminals of themounting substrate to a temperature above a melting point to allow thebump electrodes to be connected to the connection terminals, bond thesemiconductor chip to the mounting substrate and encapsulate a resultantstructure.

Additional objects and advantages of the invention will be set forth inthe description which follows, and in part will be obvious from thedescription, or may be learned by practice of the invention. The objectsand advantages of the invention may be realized and obtained by means ofthe instrumentalities and combinations particularly pointed out in theappended claims.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

The accompanying drawings, which are incorporated in and constitute apart of the specification, illustrate presently preferred embodiments ofthe invention, and together with the general description given above andthe detailed description of the preferred embodiments given below, serveto explain the principles of the invention.

FIGS. 1A to 1C show a first embodiment of the present invention;

FIGS. 2A and 2B show the first embodiment;

FIGS. 3A and 3B show the first embodiment;

FIG. 4 is a cross-sectional view showing a second embodiment of thepresent invention;

FIG. 5 is a cross-sectional view showing a third embodiment of thepresent invention;

FIGS. 6A and 6B are cross-sectional views showing the third embodimentof the present invention;

FIG. 7 is a cross-sectional view showing a fourth embodiment of thepresent invention;

FIG. 8 is a cross-sectional view showing a fifth embodiment of thepresent invention;

FIG. 9 shows a conventional method for mounting a semiconductor chipusing a flip-chip connection; and

FIG. 10 is a view showing a conventional method for mounting asemiconductor package on a mounting substrate.

DETAILED DESCRIPTION OF THE INVENTION

FIGS. 1A to 3B show a first embodiment of the present invention.Throughout the drawing, the same reference numerals are employed todesignate parts or elements of the embodiments according to the presentinvention.

As shown in FIG. 1A, metal bump electrodes 2 are formed, by a platingmethod for instance, on the electrode terminals, not shown, ofsemiconductor elements of a wafer 1. As the material of the bumpelectrode use is made of a metal material, such as a solder and gold,which is readily bonded by soldering to a mounting substrate.

Then, as shown in FIG. 1B, a thermoplastic resin 3 is coated, by a spincoating method for instance, on a wafer 1 surface with bump electrodesformed thereon. The thermoplastic resin 3 completely covers the top andside surfaces of the bump electrodes 2. That is, the surface of thethermoplastic resin 3 lies in a position higher than the tops of thebump electrodes 2 and the bump electrodes 2 are buried with thethermoplastic resin 3. The glass transition temperature of thethermoplastic resin 3 is equal to, or less than, the melting point of abrazing or soldering material for use in making a terminal-to-terminalconnection upon the mounting of a semiconductor chip on the mountingsubstrate.

Then, as shown in FIG. 1C, the thermoplastic resin 3 and bump electrode2 are polished parallel with the wafer surface. At this time, until thetop surface of the bump electrode 2 is exposed and the exposed area ofthe bump electrode 2 becomes enough wide for a solder bond to beeffected, the thermoplastic resin 3 and bump electrode are polished, sothat connection electrode 4 is provided on the semiconductor device.

Then, as shown in FIG. 2A, a wafer 1 is diced to provide semiconductorchips 5 as shown in FIG. 2B.

By these steps, a semiconductor chip 5 according to the presentinvention is completed.

Mounting the semiconductor chip 5 on the mounting substrate will beexplained below. The mounting process is the same as that of, forexample, a quad flat package (QFP) and small outline package (SOP).

Substrate electrodes 7 are provided on a mounting substrate 6. First,the brazing or soldering material 8 is coated on the substrateelectrodes 7 by a proper method such as a printing method. Thereafter,as shown in FIG. 3A, the semiconductor chip 5 with connection electrodes4 provided thereon is mounted on the mounting substrate 6 with theconnection electrode mounting surface facing the mounting substrate 6.At the time of mounting, the connection electrode 4 is located on thesoldering or brazing material 8 on the substrate electrode 7.

Thereafter, the semiconductor chip mounting substrate 7 is introducedinto a high temperature furnace where the soldering or brazing material8 is reflowed. As a result, the substrate electrode 7 is connected tothe connection electrode 4 of the semiconductor chip 5 as shown in FIG.3B.

At the time of reflowing, the thermoplastic resin 3 coated on thesurface of the semiconductor chip 5 is molten, so that the semiconductorchip 5 is bonded by the resin 3 to the mounting substrate 6.

In this way, a package structure is formed where the semiconductor chip5 is mounted on the mounting substrate 6.

Although, in the above-mentioned embodiment, the bump electrodes 2 andresin film 3 have been explained as being formed on the semiconductordevice areas of the wafer 1, it may also be possible to dice the waferinto semiconductor chips 5 and form the bump electrodes 2 and resin film3 on the semiconductor chip 5.

According to the above-mentioned embodiment, the thermoplastic resin 3is coated on the surface of the semiconductor chip 5 such that the topsurface of the thermoplastic resin 3 is made parallel to the top surfaceof the connection electrode 4. If, therefore, the semiconductor chip ismounted on the mounting substrate and reflowing is effected, a bond isestablished between the connection electrode 4 and the substrateelectrode 7. At the same time, the semiconductor chip 5 is bonded by themolten resin 3 to the mounting substrate 6 and the semiconductor chip 5is encapsulated with the resin 3. This obviates the need to inject theresin into a clearance between the mounting substrate and thesemiconductor chip, after the reflowing has been achieved, as in thecase of the prior art. It is, therefore, possible to lower a costinvolved.

In the present embodiment, the element areas of the semiconductor chipare protected by the resin and the resin by itself serves as a package.When, therefore, the semiconductor device is transported, it is possibleto handle it in the same way as a normal package product.

According to the present invention, the semiconductor device hassubstantially the same size as that of the semiconductor chip and it ispossible to achieve a compact package.

For the present embodiment, the wafer as it is coated with the resin,before it is diced into the semiconductor chips, so that the assemblingcost can be lowered.

FIG. 4 shows a second embodiment of the present invention.

The second embodiment is the same as the first embodiment except thatthe surface of the wafer 1 is coated with two kinds of resin to providea double resin layer structure.

As set out above, bump electrodes 2 are formed on the wafer 1 and thebump electrode-mounted surface of the wafer 1 is coated with athermosetting resin 10, that is, a resin not molten upon being heated.The surface of the thermosetting resin 10 lies in a position lower thanthe top surface of the bump electrode 2.

A thermoplastic resin 9 is coated on the thermosetting resin 10 and thesurface of the thermoplastic resin 9 lies in a position higher than thetop of the bump electrode 2. The glass transition temperature of thethermoplastic resin is equal to, or less than, the melting point of thesoldering or brazing material.

As in the first embodiment, until the bump electrode 2 is exposed andits exposed area becomes enough great to be bonded, the resin 9 and bump2 are polished parallel to the wafer. The subsequent steps are the sameas in the first embodiment.

In the present embodiment, an adhesive sheet and bonding agent can beused in place of the thermoplastic resin 9.

According to the second embodiment, unlike the first embodiment, theresin 9 is molten at an area to be bonded to the mounting substrate 6 ata time of reflowing. For this reason, the height, diameter, etc., of theconnection electrode 4 suffer less damage due to the flow of the resin,thus preventing an electrode-to-electrode short-circuiting. As in thefirst embodiment, it is possible to simultaneously achieve connectionbetween the connection electrode 4 of the semiconductor chip 5 and thesubstrate electrode 7 as well as an insulation with the resin.

FIG. 5 shows a third embodiment of the present invention.

First, as in the first and second embodiments, the third embodiment isof such a type that bump electrodes 2 are formed on the surface of awafer 1 and that the surface of the wafer 1 is coated with resin as onelayer or a multi-layered structure.

Then, resin 11 is coated on the rear surface of the wafer 1 and it maybe thermoplastic or thermosetting resin.

As in the case of the first and second embodiments, the resin and bumpelectrodes on the surface of the wafer 1 are polished until the bumpelectrode 2 is exposed and its exposed area is enough great to bebonded.

Thereafter, the wafer 1 is diced into semiconductor chips 5. FIG. 5shows the cross-section of the semiconductor device thus formed.

In the embodiment shown in FIGS. 1 to 4, the resin is coated only at thesurface of the wafer where the bump electrodes 2 are mounted and theother surface of the wafer is not coated with the resin. Therefore,there is a possibility that the wafer will sometimes warp. In the thirdembodiment, it is possible to obtain the same advantage as in the firstand second embodiments and also to prevent a warp in the wafer becausethe resin 11 is coated also to the rear surface of the wafer 1.

Further, in the case where the thermoplastic resin is used as the resin11, as shown in FIGS. 6A and 6B, the semiconductor chip 5 is mounted onthe mounting surface 6 and, at a time of reflowing, the resin 11 ismolten and flowed, so that the four side surfaces of the semiconductorchip 5 is covered with the resin 11. In this case, the resultantsemiconductor chip 5 ensures high reliability as well as high resistanceto moisture.

FIG. 7 shows a fourth embodiment of the present invention.

First, as in the first and second embodiments, the bump electrodes 2 areprovided on the wafer 1 and the resin is coated on the surface of thewafer where bump electrodes are provided. And the resin and bumpelectrodes are polished to provide a connection electrode 4. Then thewafer is diced into semiconductor chips 5.

Then the rear surface and four side surfaces of the semiconductor chip5, that is, these surfaces not coated with resin, are coated with resinby a proper method such as dipping. The subsequent steps are the same asin the first and second embodiments.

In the fourth embodiment, it is possible to obtain the same advantage asin the first and second embodiments and also to provide enhancedmoisture resistance to the semiconductor chip 5.

FIG. 8 shows a fifth embodiment of the present invention.

First, bump electrodes 2 are mounted on the wafer 1 and resin is coatedon the surface of the wafer where the bump electrodes are provided. Andthe resin and bump electrode are polished to provide a connectionelectrode 4.

To the rear surface of the wafer 1, that is, the surface not coated withresin, a metal plate 14 is bonded with the use of an adhesive resin orbrazing (or soldering) material.

Then, the wafer 1 is diced into semiconductor chip 5 as shown in FIG. 8.Subsequent steps are the same as in the first and second embodiments.

In the fifth embodiment it is possible to obtain the same advantage asin the first and second embodiments. Since the metal plate 14 is bondedto the rear surface side of the semiconductor wafer, it is possible toprevent a warp in the wafer and in a package. It is easy to connect acooling device or a heat sink to the semiconductor chip 5 via the metalplate 14.

Although, in the above-mentioned first and second embodiments, use ismade, for the bump electrodes, of a metal material which is molten at atime of reflowing, the present invention is not restricted thereto. Evenif, as the bump electrode, use is made of a metal material, such as goldor high-temperature solder, not molten at a time of reflowing, it ispossible to achieve the object of the present invention with the sameadvantage.

Additional advantages and modifications will readily occur to thoseskilled in the art. Therefore, the invention in its broader aspects isnot limited to the specific details, and representative embodimentsshown and described herein. Accordingly, various modifications may bemade without departing from the spirit or scope of the general inventiveconcept as defined by the appended claims and their equivalents.

What is claimed is:
 1. A method for manufacturing a semiconductordevice, comprising the steps of: forming bump electrodes on a surface ofa semiconductor chip including the bump electrodes, a protection film tocompletely cover the bump electrodes, the protection film allowed to bemolten at a time of mounting the semiconductor chip, bonding the chip toa mounting substrate, and encapsulating the chip; and polishing theprotection film and bump electrodes until the bump electrodes areexposed for bonding.
 2. A method according to claim 1, wherein theprotection film is formed of thermoplastic resin.
 3. A method accordingto claim 1, wherein the protection film is formed of thermoplastic resinhaving a glass transition temperature equal to, or less than, a meltingpoint of a soldering or brazing material for connecting to a terminal ofa mounting substrate.
 4. A method according to claim 1, wherein theprotection film has a two-layer structure, one layer being formed ofthermosetting resin provided on the semiconductor chip and the otherlayer being formed of thermoplastic resin provided on the thermosettingresin.
 5. A method according to claim 1, wherein the protection film hasa two-layered structure, one layer being formed of thermosetting resinprovided on the semiconductor chip and the other layer being formed ofthermoplastic resin provided on the thermosetting resin, thethermoplastic resin having a glass transition temperature equal to, orless than, a melting point of a soldering or brazing material forconnecting to a terminal of a mounting substrate.
 6. A method formanufacturing a semiconductor device, comprising the steps of: formingbump electrodes on a surface of each semiconductor chip area of asemiconductor wafer; coating, on a whole surface of a semiconductorwafer including the bump electrodes, a protection film to completelycover the bump electrodes, the protection film allowed to be molten at atime of mounting the semiconductor chip, bonding the semiconductor chipto a mounting substrate, and encapsulating the chip therewith; polishingthe protection film and bump electrodes until the bump electrode isexposed for bonding; and dicing the semiconductor layer intosemiconductor chips.
 7. A method according to claim 6, wherein theprotection film is formed of thermoplastic resin.
 8. A method accordingto claim 6, wherein the protection film is formed of thermoplastic resinhaving a glass transition temperature equal to, or less than, a meltingpoint of a soldering or brazing material for connecting to a terminal ofa mounting substrate.
 9. A method according to claim 6, wherein theprotection film has a two-layered structure, one layer being formed ofthermosetting resin provided on the semiconductor chip and the otherlayer being formed of thermoplastic resin provided on the thermosettingresin layer.
 10. A method according to claim 6, wherein the protectionfilm has a two-layered structure, one layer being formed ofthermosetting resin provided on the semiconductor chip and the otherlayer being formed of thermoplastic resin provided on the thermosettingresin layer, the thermoplastic resin having a glass transitiontemperature equal to, or less than, a soldering or brazing material forconnecting to a terminal of a mounting substrate.
 11. A method formanufacturing a semiconductor device, comprising the steps of: formingbump electrodes on a surface of a semiconductor wafer at eachsemiconductor chip area; coating, on a whole surface of a semiconductorwafer including the bump electrodes, a protection film to completelycover the bump electrodes, the protection film allowed to be molten at atime of mounting the semiconductor chip, bonding the semiconductor chipto a mounting substrate, and encapsulate encapsulating the chip; coatinga resin layer on a back surface of the semiconductor chip; polishing theprotection film and bump electrodes until the bump electrodes areexposed for bonding; and dicing the semiconductor wafer intosemiconductor chips.
 12. A method for manufacturing a semiconductordevice, comprising the steps of: forming bump electrodes on a surface ofa semiconductor wafer at each semiconductor chip area; coating, on awhole surface of the semiconductor wafer including the bump electrodes,a protection film to completely cover the bump electrodes, theprotection film allowed to be molten at a time of mounting asemiconductor chip, bonding the semiconductor chip to a mountingsubstrate, and encapsulating the semiconductor chip; polishing theprotection film and bump electrodes until the lump electrodes areexposed for bonding; dicing the semiconductor wafer into semiconductorchips; and coating a resin layer on rear and side surfaces of thesemiconductor chip not covered with the protection film.
 13. A methodfor manufacturing a package structure, comprising the steps of: locatinga semiconductor device on a mounting substrate in an aligned relation,the semiconductor device having a semiconductor chip, bump electrodesprovided on the semiconductor chip and a protection film covering asurface of the semiconductor chip with top surfaces of the bumpelectrodes exposed and the mounting substrate having connectionterminals on a surface with a soldering or brazing material provided onthe connection terminals to allow terminal connection, the locating stepbeing so done as to locate the bump-electrode-carrying surface side ofthe semiconductor chip opposite to the mounting substrate with the bumpelectrodes aligned with the soldering or brazing material; and heatingthe soldering or brazing material on the terminals of the mountingsubstrate to a temperature above a melting point to allow the bumpelectrodes to be connected to the connection terminals, and thereby bondthe semiconductor chip to the mounting substrate and encapsulate aresultant structure.